BT151-500R N-Kanal MOS FET NPN Epitaxie-Siliziumtransistor 3-polige Transistor-Thyristoren
Spezifikationen
Thermal resistance junction to ambient:
60 K/W
Average on-state current:
7.5 A
RMS on-state current:
12 A
Non-repetitive peak on-state current:
100 A
Storage temperature:
-40 to 150 ˚C
Operating junction temperature:
125 ˚C
Höhepunkt:
npn smd transistor
,multi emitter transistor
Einleitung
Array
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MOQ:
10pcs